typ maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 40 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6.0 v collector current i c 1.0 a collector current (peak) i cm 1.5 a power dissipation (see note 1) p d 0.9 w operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance (see note 1) ja 139 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min pnp npn max units i cbo v cb =40v 100 na i ebo v eb =6.0v 100 na bv cbo i c =100a 40 v bv ceo i c =10ma 25 v bv ebo i e =100a 6.0 v v ce(sat) i c =50ma, i b =5.0ma .02 .025 .05 v v ce(sat) i c =100ma, i b =10ma .035 .04 .075 v v ce(sat) i c =200ma, i b =20ma .075 .08 0.15 v v ce(sat) i c =500ma, i b =50ma 0.13 0.15 0.25 v v ce(sat) i c =800ma, i b =80ma 0.2 0.22 0.4 v v ce(sat) i c =1.0a, i b =100ma 0.25 0.275 0.45 v v be(sat) i c =800ma, i b =80ma 1.1 v v be(on) v ce =1.0v, i c =10ma 0.9 v h fe v ce =1.0v, i c =10ma 100 h fe v ce =1.0v, i c =100ma 100 300 h fe v ce =1.0v, i c =500ma 100 h fe v ce =1.0v, i c =1.0a 50 f t v ce =10v, i c =50ma, f=100mhz 100 mhz c ob v cb =10v, i e =0, f=1.0mhz (npn) 10 pf c ob v cb =10v, i e =0, f=1.0mhz (pnp) 15 pf ctlt3410-m621 (npn) ctlt7410-m621 (pnp) surface mount complementary silicon low v ce (sat) transistors central semiconductor corp. tm r0 (14-january 2008) ctlt3410-m621 marking code: cb ctlt7410-m621 marking code: cd applications: ? dc/dc converters ? switching circuits ? lcd backlighting ? battery powered portable equipment features: ? high operational efficiency ? high power to footprint ratio ? v ce(sat) @ 1.0a = 250mv (typ) ? high collector current ? small tlm621 1x2mm package tlm621 bottom view top view description: the central semiconductor ctlt3410-m621 and ctlt7410-m621 are low v ce (sat) transistors in a very small leadless 1x2mm surface mount package, designed for applications where small size, operational efficiency, and low energy consumption are prime requirements. due to the leadless package design, these devices are capable of dissipating up to 3 times the power of similar devices in comparable sized surface mount packages. note 1: fr-4 epoxy pcb with copper mounting pad area of 33mm 2
central semiconductor corp. tm ctlt3410-m621 (npn) ctlt7410-m621 (pnp) surface mount complementary silicon low v ce (sat) transistors r0 (14-january 2008) tlm621 case - mechanical outline lead code: 1) collector 2) collector 3) base 4) emitter 5) collector 6) collector marking code: cb pin configuration suggested mounting pads (dimensions in mm) r0 ctlt3410-m621 ctlt7410-m621 lead code: 1) collector 2) collector 3) base 4) emitter 5) collector 6) collector marking code: cd
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